View EN25Q128-104BBAP_4332872.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 1 en25q128 rev. j, issue date: 2011 / 09 / 19 features ? single power supply operation - full voltage range: 2.7-3.6 volt ? serial interface architecture - spi compatible: mode 0 and mode 3 ? 128 m-bit serial flash - 128 m-bit/16,384 k-byte/65,536 pages - 256 bytes per programmable page ? standard, dual or quad spi - standard spi: clk, cs#, di, do, wp# - dual spi: clk, cs#, dq 0 , dq 1 , wp# - quad spi: clk, cs#, dq 0 , dq 1 , dq 2 , dq 3 ? high performance - 104mhz clock rate for standard spi - 80mhz clock rate for two data bits - 50mhz clock rate for four data bits ? low power consumption - 12 ma typical active current - 1 a typical power down current ? uniform sector architecture: - 4096 sectors of 4-kbyte - 256 blocks of 64-kbyte - any sector or block can be erased individually ? software and hardware write protection: - write protect all or portion of memory via software - enable/disable protection with wp# pin ? high performance program/erase speed - page program time: 0.8ms typical - sector erase time: 50ms typical - block erase time 200ms typical - chip erase time: 45 seconds typical ? lockable 512 byte otp security sector ? minimum 100k endurance cycle ? package options - 8 contact vdfn (5x6mm) - 8 contact vdfn (6x8mm) - 16 pins sop 300mil body width - 24 balls tfbga (6x8mm) - all pb-free packages are rohs compliant ? industrial and automotive temperature range general description the en25q128 is a 128 megabit (16,384k-byte) serial flash memory, with advanced write protection mechanisms. the en25q128 supports the standard serial peripheral interface (spi), and a high performance dual output as well as dual/quad i/o using spi pins: serial clock, chip select, serial dq 0 (di), dq 1 (do), dq 2 (wp#) and dq 3 (nc). spi clock frequencies of up to 80mhz are supported allowing equivalent clock rates of 160mhz (80mhz x 2) for dual output when using the dual output fast read instructions, and spi clock frequencies of up to 50mhz are supported allowing equivalent clock rates of 200mhz (50mhz x 4) for quad output when using the quad output fast read instructions. the memory can be programmed 1 to 256 bytes at a time, using the page program instruction. the en25q128 is designed to allow either single sector/block at a time or full chip erase operation. the en25q128 can be configured to protect part of the memory as the software protected mode. the device can sustain a minimum of 100k program/erase cycles on each sector or block . en25q128 128 me g abit serial flash memor y with 4kb y te uniform sector
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 2 en25q128 rev. j, issue date: 2011 / 09 / 19 figure.1 connection diagrams 8 - lead vdfn do (dq 1 ) wp# (dq 2 ) vss cs# di (dq 0 ) clk nc (dq 3 ) vcc 1 2 3 4 8 7 6 5 16 - lead sop
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 3 en25q128 rev. j, issue date: 2011 / 09 / 19 top view, balls facing down 24 - ball tfbga
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 4 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 2. block diagram note: 1. dq 0 and dq 1 are used for dual and quad instructions. 2. dq 0 ~ dq 3 are used for quad instructions.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 5 en25q128 rev. j, issue date: 2011 / 09 / 19 table 1. pin names symbol pin name clk serial clock input di (dq 0 ) serial data input (data input output 0) *1 do (dq 1 ) serial data output (data input output 1) *1 cs# chip enable wp# (dq 2 ) write protect (data input output 2) *2 nc(dq 3 ) not connect (data input output 3) *2 vcc supply voltage (2.7-3.6v) vss ground nc no connect note: 1. dq 0 and dq 1 are used for dual and quad instructions. 2. dq 0 ~ dq 3 are used for quad instructions. signal description serial data input, output and ios (di, do and dq 0 , dq 1 , dq 2 , dq 3 ) the en25q128 support standard spi, dual spi and quad spi operation. standard spi instructions use the unidirectional di (input) pin to serially write instruct ions, addresses or data to the device on the rising edge of the serial clock (clk) input pin. standard spi also uses the unidirectional do (output) to read data or status from the device on the falling edge clk. dual and quad spi instruction use the bidirectional io pins to serially write instruction, addresses or data to the device on the rising ed ge of clk and read data or status from the device on the falling edge of clk. serial clock (clk) the spi serial clock input (clk) pin provides the timing for serial input and output operations. ("see spi mode") chip select (cs#) the spi chip select (cs#) pin enables and disables device operation. when cs# is high the device is deselected and the serial data output (do, or dq 0 , dq 1 , dq 2 and dq 3 ) pins are at high impedance. when deselected, the device s power consumption will be at standby levels unless an internal erase, program or status register cycle is in progress. wh en cs# is brought low the device will be selected, power consumption will increase to active levels and instructions can be written to and data read from the device. after power-up , cs# must transition from high to low before a new instruction will be accepted. write protect (wp#) the write protect (wp#) pin can be used to prevent the status register from being written. used in conjunction with the status register?s block protect (bp0, bp1, bp2 and bp3) bits and status register protect (srp) bits, a portion or the entire memory array can be hardware protected. the wp# function is only available for standard spi and dual spi operation, when during quad spi, this pin is the serial data io (dq 2 ) for quad i/o operation.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 6 en25q128 rev. j, issue date: 2011 / 09 / 19 memory organization the memory is organized as: z 16,777,216 bytes z uniform sector architecture 256 blocks of 64-kbyte 4,096 sectors of 4-kbyte 65,536 pages (256 bytes each) each page can be individually programmed (bits are programmed from 1 to 0). the device is sector, block or chip erasable but not page erasable.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 7 en25q128 rev. j, issue date: 2011 / 09 / 19 table 2. uniform block sector architecture ( 1/4 ) block sector address range block sector address range 4095 fff000h ffffffh 3839 eff000h efffffh ?. ?. ?. ?. ?. ?. 255 4080 ff0000h ff0fffh 239 3824 ef0000h ef0fffh 4079 fef000h feffffh 3823 eef000h eeffffh ?. ?. ?. ?. ?. ?. 254 4064 fe0000h fe0fffh 238 3808 ee0000h ee0fffh 4063 fdf000h fdffffh 3807 edf000h edffffh ?. ?. ?. ?. ?. ?. 253 4048 fd0000h fd0fffh 237 3792 ed0000h ed0fffh 3 ?. ?. ?. ?. ?. ?. ?. ?. 3887 f2f000h f2ffffh 3631 e2f000h e2ffffh ?. ?. ?. ?. ?. ?. 242 3872 f20000h f20fffh 226 3616 e20000h e20fffh 3871 f1f000h f1ffffh 3615 e1f000h e1ffffh ?. ?. ?. ?. ?. ?. 241 3856 f10000h f10fffh 225 3600 e10000h e10fffh 3855 f0f000h f0ffffh 3599 e0f000h e0ffffh ?. ?. ?. ?. ?. ?. 240 3840 f00000h f00fffh 224 3584 e00000h e00fffh block sector address range block sector address range 3583 dff000h dfffffh 3327 cff000h cfffffh ?. ?. ?. ?. ?. ?. 223 3568 df0000h df0fffh 207 3312 cf0000h cf0fffh 3567 def000h deffffh 3311 cef000h ceffffh ?. ?. ?. ?. ?. ?. 222 3552 de0000h de0fffh 206 3296 ce0000h ce0fffh 3551 ddf000h ddffffh 3295 cdf000h cdffffh ?. ?. ?. ?. ?. ?. 221 3536 dd0000h dd0fffh 205 3280 cd0000h cd0fffh ?. ?. ?. ?. ?. ?. ?. ?. 3375 d2f000h d2ffffh 3119 c2f000h c2ffffh ?. ?. ?. ?. ?. ?. 210 3360 d20000h d20fffh 194 3014 c20000h c20fffh 3359 d1f000h d1ffffh 3103 c1f000h c1ffffh ?. ?. ?. ?. ?. ?. 209 3344 d10000h d10fffh 193 3088 c10000h c10fffh 3343 d0f000h d0ffffh 3087 c0f000h c0ffffh ?. ?. ?. ?. ?. ?. 208 3328 d00000h d00fffh 192 3072 c00000h c00fffh
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 8 en25q128 rev. j, issue date: 2011 / 09 / 19 table 2. uniform block sector architecture ( 2/4 ) block sector address range block sector address range 3071 bff000h bfffffh 2815 aff000h afffffh ?. ?. ?. ?. ?. ?. 191 3056 bf0000h bf0fffh 175 2800 af0000h af0fffh 3055 bef000h beffffh 2799 aef000h aeffffh ?. ?. ?. ?. ?. ?. 190 3040 be0000h be0fffh 174 2784 ae0000h ae0fffh 3039 bdf000h bdffffh 2783 adf000h adffffh ?. ?. ?. ?. ?. ?. 189 3024 bd0000h bd0fffh 173 2768 ad0000h ad0fffh ?. ?. ?. ?. ?. ?. ?. ?. 2863 b2f000h b2ffffh 2607 a2f000h a2ffffh ?. ?. ?. ?. ?. ?. 178 2848 b20000h b20fffh 162 2592 a20000h a20fffh 2847 b1f000h b1ffffh 2591 a1f000h a1ffffh ?. ?. ?. ?. ?. ?. 177 2832 b10000h b10fffh 161 2576 a10000h a10fffh 2831 b0f000h b0ffffh 2575 a0f000h a0ffffh ?. ?. ?. ?. ?. ?. 176 2816 b00000h b00fffh 160 2560 a00000h a00fffh block sector address range block sector address range 2559 9ff000h 9fffffh 2303 8ff000h 8fffffh ?. ?. ?. ?. ?. ?. 159 2544 9f0000h 9f0fffh 143 2288 8f0000h 8f0fffh 2543 9ef000h 9effffh 2287 8ef000h 8effffh ?. ?. ?. ?. ?. ?. 158 2528 9e0000h 9e0fffh 142 2272 8e0000h 8e0fffh 2527 9df000h 9dffffh 2271 8df000h 8dffffh ?. ?. ?. ?. ?. ?. 157 2512 9d0000h 9d0fffh 141 2256 8d0000h 8d0fffh ?. ?. ?. ?. ?. ?. ?. ?. 2351 92f000h 92ffffh 2095 82f000h 82ffffh ?. ?. ?. ?. ?. ?. 146 2336 920000h 920fffh 130 2080 820000h 820fffh 2335 91f000h 91ffffh 2079 81f000h 81ffffh ?. ?. ?. ?. ?. ?. 145 2320 910000h 910fffh 129 2064 810000h 810fffh 2319 90f000h 90ffffh 2063 80f000h 80ffffh ?. ?. ?. ?. ?. ?. 144 2304 900000h 900fffh 128 2048 800000h 800fffh
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 9 en25q128 rev. j, issue date: 2011 / 09 / 19 table 2. uniform block sector architecture ( 3/4 ) block sector address range block sector address range 2047 7ff000h 7fffffh 1791 6ff000h 6fffffh ?. ?. ?. ?. ?. ?. 127 2032 7f0000h 7f0fffh 111 1776 6f0000h 6f0fffh 2031 7ef000h 7effffh 1775 6ef000h 6effffh ?. ?. ?. ?. ?. ?. 126 2016 7e0000h 7e0fffh 110 1760 6e0000h 6e0fffh 2015 7df000h 7dffffh 1759 6df000h 6dffffh ?. ?. ?. ?. ?. ?. 125 2000 7d0000h 7d0fffh 109 1744 6d0000h 6d0fffh ?. ?. ?. ?. ?. ?. ?. ?. 1839 72f000h 72ffffh 1583 62f000h 62ffffh ?. ?. ?. ?. ?. ?. 114 1824 720000h 720fffh 98 1568 620000h 620fffh 1823 71f000h 71ffffh 1567 61f000h 61ffffh ?. ?. ?. ?. ?. ?. 113 1808 710000h 710fffh 97 1552 610000h 610fffh 1807 70f000h 70ffffh 1551 60f000h 60ffffh ?. ?. ?. ?. ?. ?. 112 1792 700000h 700fffh 96 1536 600000h 600fffh block sector address range block sector address range 1535 5ff000h 5fffffh 1279 4ff000h 4fffffh ?. ?. ?. ?. ?. ?. 95 1520 5f0000h 5f0fffh 79 1264 4f0000h 4f0fffh 1519 5ef000h 5effffh 1263 4ef000h 4effffh ?. ?. ?. ?. ?. ?. 94 1504 5e0000h 5e0fffh 78 1248 4e0000h 4e0fffh 1503 5df000h 5dffffh 1247 4df000h 4dffffh ?. ?. ?. ?. ?. ?. 93 1488 5d0000h 5d0fffh 77 1232 4d0000h 4d0fffh ?. ?. ?. ?. ?. ?. ?. ?. 1327 52f000h 52ffffh 1071 42f000h 42ffffh ?. ?. ?. ?. ?. ?. 82 1312 520000h 520fffh 66 1056 420000h 420fffh 1311 51f000h 51ffffh 1055 41f000h 41ffffh ?. ?. ?. ?. ?. ?. 81 1296 510000h 510fffh 65 1040 410000h 410fffh 1295 50f000h 50ffffh 1039 40f000h 40ffffh ?. ?. ?. ?. ?. ?. 80 1280 500000h 500fffh 64 1024 400000h 400fffh
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 10 en25q128 rev. j, issue date: 2011 / 09 / 19 table 2. uniform block sector architecture ( 4/4 ) block sector address range block sector address range 1023 3ff000h 3fffffh 767 2ff000h 2fffffh ?. ?. ?. ?. ?. ?. 63 1008 3f0000h 3f0fffh 47 752 2f0000h 2f0fffh 1007 3ef000h 3effffh 751 2ef000h 2effffh ?. ?. ?. ?. ?. ?. 62 992 3e0000h 3e0fffh 46 736 2e0000h 2e0fffh 991 3df000h 3dffffh 735 2df000h 2dffffh ?. ?. ?. ?. ?. ?. 61 976 3d0000h 3d0fffh 45 720 2d0000h 2d0fffh ?. ?. ?. ?. ?. ?. ?. ?. 815 32f000h 32ffffh 559 22f000h 22ffffh ?. ?. ?. ?. ?. ?. 50 800 320000h 320fffh 34 544 220000h 220fffh 799 31f000h 31ffffh 543 21f000h 21ffffh ?. ?. ?. ?. ?. ?. 49 784 310000h 310fffh 33 528 210000h 210fffh 783 30f000h 30ffffh 527 20f000h 20ffffh ?. ?. ?. ?. ?. ?. 48 768 300000h 300fffh 32 512 200000h 200fffh block sector address range block sector address range 511 1ff000h 1fffffh 255 0ff000h 0fffffh ?. ?. ?. ?. ?. ?. 31 496 1f0000h 1f0fffh 15 240 0f0000h 0f0fffh 495 1ef000h 1effffh 239 0ef000h 0effffh ?. ?. ?. ?. ?. ?. 30 480 1e0000h 1e0fffh 14 224 0e0000h 0e0fffh 479 1df000h 1dffffh 223 0df000h 0dffffh ?. ?. ?. ?. ?. ?. 29 464 1d0000h 1d0fffh 13 208 0d0000h 0d0fffh ?. ?. ?. ?. ?. ?. ?. ?. 303 12f000h 12ffffh 47 02f000h 02ffffh ?. ?. ?. ?. ?. ?. 18 288 120000h 120fffh 2 32 020000h 020fffh 287 11f000h 11ffffh 31 01f000h 01ffffh ?. ?. ?. ?. ?. ?. 17 272 110000h 110fffh 1 16 010000h 010fffh 271 10f000h 10ffffh 15 00f000h 00ffffh ?. ?. ?. ?. ?. ?. 16 256 100000h 100fffh 4 004000h 004fffh 3 003000h 003fffh 2 002000h 002fffh 1 001000h 001fffh 0 0 000000h 000fffh
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 11 en25q128 rev. j, issue date: 2011 / 09 / 19 operating features standard spi modes the en25q128 is accessed through a spi compatible bus consisting of four signals: serial clock (clk), chip select (cs#), serial data input (di) and serial data output (do). both spi bus operation modes 0 (0,0) and 3 (1,1) are supported. the primary difference between mode 0 and mode 3, as shown in figure 3, concerns the normal state of the clk signal when the spi bus master is in standby and data is not being transferred to the serial flash. for mode 0 the clk signal is normally low. for mode 3 the clk signal is normally high. in either case data input on the di pin is sampled on the rising edge of the clk. data output on the do pi n is clocked out on the falling edge of clk. figure 3. spi modes dual spi instruction the en25q128 supports dual spi operation when using the ?dual output fast read and dual i/o fast read ? (3bh and bbh) instructions. these instructions allow data to be transferred to or from the serial flash memory at two to three times the rate possible with the standard spi. the dual read instructions are ideal for quickly downloading code from flash to ram upon power-up (code-shadowing) or for application that cache code-segments to ram for execution. the dual output feature simply allows the spi input pin to also serve as an output during this instruction. when using dual spi instructions the di and do pins become bidirectional i/o pins; dq 0 and dq 1 . all other operations use the standard spi interface with single output signal. quad spi instruction the en25q128 supports quad output operation when using the quad i/o fast read (ebh).this instruction allows data to be transferred to or from the serial flash memory at four to six times the rate possible with the standard spi. the quad read instruction offer a significant improvement in continuous and random access transfer rates allowing fast code-shadowing to ram or for application that cache code-segments to ram for execution. the en25q128 also supports full quad mode function while using the enable quad peripheral interface mode (eqpi) (38h). when using quad spi instruction the di and do pins become bidirectional i/o pins; dq 0 and dq 1, and the wp# and nc pins become dq 2 and dq 3 respectively.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 12 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 4. quad spi modes page programming to program one data byte, two instructions are required: write enable (wren), which is one byte, and a page program (pp) sequence, which consists of four bytes plus data. this is followed by the internal program cycle (of duration t pp ). to spread this overhead, the page program (pp) instruction allows up to 256 bytes to be programmed at a time (changing bits from 1 to 0) provided that they lie in consecutive addresses on the same page of memory. sector erase, block erase and chip erase the page program (pp) instruction allows bits to be reset from 1 to 0. before this can be applied, the bytes of memory need to have been erased to all 1s (ffh). this can be achieved a sector at a time, using the sector erase (se) instruction, a block at a time using the block erase (be) instruction or throughout the entire memory, using the chip erase (ce) instruction. this starts an internal erase cycle (of duration t se t be or t ce ). the erase instruction must be preceded by a write enable (wren) instruction. polling during a write, program or erase cycle a further improvement in the time to write status register (wrsr), program (pp) or erase (se, be or ce) can be achieved by not waiting for the worst case delay (t w , t pp , t se , t be or t ce ). the write in progress (wip) bit is provided in the status register so that the application program can monitor its value, polling it to estab lish when the previous write cycle, prog ram cycle or erase cycle is complete. active power, stand-by power and deep power-down modes when chip select (cs#) is low, the device is enabled, and in the active power mode. when chip select (cs#) is high, the device is disabled, but could remain in the active power mode until all internal cycles have completed (program, erase, and write status register). the device then goes into the stand-by power mode. the device consumption drops to i cc1 . the deep power-down mode is entered when the specific instruction (the enter deep power-down mode (dp) instruction) is executed. the device consumption drops further to i cc2 . the device remains in this mode until another specif ic instruction (the release from deep power-down mode and read device id (rdi) instruction) is executed. all other instructions are ignored while the device is in the deep power-down mode. this can be used as an extra software protection mechanism, when the device is not in active use, to protect the device from inadvertent write, program or erase instructions.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 13 en25q128 rev. j, issue date: 2011 / 09 / 19 status register the status register contain a number of status and control bits that can be read or set (as appropriate) by specific instructions. wip bit. the write in progress (wip) bit indicates whether the memory is busy with a write status register, program or erase cycle. wel bit. the write enable latch (wel) bit indicates the status of the internal write enable latch. bp3, bp2, bp1, bp0 bits. the block protect (bp3, bp2, bp1, bp0) bits are non-volatile. they define the size of the area to be software protected against program and erase instructions. wpdis bit. the write protect disable (wpdis) bit, non-volat ile bit, when it is reset to ?0? (factory default) to enable wp# function or is set to ?1? to disable wp# function (can be floating during spi mode.) srp bit / otp_lock bit the status register protect (srp) bit operates in conjunction with the write protect (wp#) signal. the status register protect (srp) bit and write protect (wp#) signal allow the device to be put in the hardware protected mode. in this mode, the non-volatile bits of the status register (srp, bp3, bp2, bp1, bp0) become read-only bits. in otp mode, this bit serves as otp_lock bit, user can read/program/erase otp sector as normal sector while otp_lock bit value is equal 0, after otp_lock bit is programmed with 1 by wrsr command, the otp sector is protected from program and erase operation. the otp_lock bit can only be programmed once. note : in otp mode, the wrsr command will ignore any input data and program otp_lock bit to 1, user must clear the protect bits before entering otp mode and program the otp code, then execute wrsr command to lock the otp sector before leaving otp mode. write protection applications that use non-volatile me mory must take into considerati on the possibility of noise and other adverse system conditions that may compromise data integrity. to address this concern the en25q128 provides the following data protection mechanisms: z power-on reset and an internal timer (t puw ) can provide protection against inadvertent changes while the power supply is outside the operating specification. z program, erase and write status register instructions are checked that they consist of a number of clock pulses that is a multiple of eight, before they are accepted for execution. z all instructions that modify data must be preceded by a write enable (wren) instruction to set the write enable latch (wel) bit. this bit is returned to its reset state by the following events: ? power-up ? write disable (wrdi) instruction completion or write status register (wrsr) instruction completion or page program (pp) instruction completion or sector erase (se) instruction completion or block erase (be) instruction completion or chip erase (ce) instruction completion z the block protect (bp3, bp2, bp1, bp0) bits allow part of the memory to be configured as read- only. this is the software protected mode (spm). z the write protect (wp#) signal allows the block protect (bp3, bp2, bp1, bp0) bits and status register protect (srp) bit to be protected. this is the hardware protected mode (hpm). z in addition to the low power consumption feature, the deep power-down mode offers extra software protection from inadvertent write, program and erase instructions, as all instructions are ignored except one particular instruction (the release from deep power-down instruction).
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 14 en25q128 rev. j, issue date: 2011 / 09 / 19 table 3. protected area sizes sector organization status register content memory content bp3 bit bp2 bit bp1 bit bp0 bit protect areas addresses density(kb) portion 0 0 0 0 none none none none 0 0 0 1 block 0 to 254 000000h-feffffh 16320kb lower 255/256 0 0 1 0 block 0 to 253 000000h-fdffffh 16256kb lower 254/256 0 0 1 1 block 0 to 251 000000h-fbffffh 16128kb lower 252/256 0 1 0 0 block 0 to 247 000000h-f7ffffh 15872kb lower 248/256 0 1 0 1 block 0 to 239 000000h-efffffh 15360kb lower 240/256 0 1 1 0 block 0 to 223 000000h-dfffffh 14336kb lower 224/256 0 1 1 1 all 000000h-ffffffh 16384kb all 1 0 0 0 none none none none 1 0 0 1 block 255 to 1 ffffffh-010000h 16320kb upper 255/256 1 0 1 0 block 255 to 2 ffffffh-020000h 16256kb upper 254/256 1 0 1 1 block 255 to 4 ffffffh-040000h 16128kb upper 252/256 1 1 0 0 block 255 to 8 ffffffh-080000h 15872kb upper 248/256 1 1 0 1 block 255 to 16 ffffffh-100000h 15360kb upper 240/256 1 1 1 0 block 255 to 32 ffffffh-200000h 14336kb upper 224/256 1 1 1 1 all ffffffh-000000h 16384kb all instructions all instructions, addresses and data are shifted in and out of the device, most significant bit first. serial data input (di) is sampled on the first rising edge of serial clock (clk) after chip select (cs#) is driven low. then, the one-byte instruction code must be shifted in to the device, most significant bit first, on serial data input (di), each bit being latched on the rising edges of serial clock (clk). the instruction set is listed in tabl e 4. every instruction sequence st arts with a one-byte instruction code. depending on the instruction, this might be followed by address bytes, or by data bytes, or by both or none. chip select (cs#) must be driven high after the last bit of the instruction sequence has been shifted in. in the case of a read data bytes (read), read data bytes at higher speed (fast_read), dual output fast read (3bh), dual i/o fast read (bbh), quad input/output fast_read (ebh), read status register (rdsr) or release from deep power-down, and read device id (rdi) instruction, the shifted-in instruction sequence is followed by a data-out sequence. chip select (cs#) can be driven high after any bit of the data-out sequence is being shifted out. in the case of a page program (pp), sector erase (se), block erase (be), chip erase (ce), write status register (wrsr), write enable (wren), write disable (wrdi) or deep power-down (dp) instruction, chip select (cs#) must be driven high exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. that is, chip select (cs#) must driven high when the number of clock pulses after chip select (cs#) being driven low is an exact multiple of eight. for page program, if at any time the input byte is not a full byte, no thing will hap pen and wel will not be reset. in the case of multi-byte commands of page program (pp), and release from deep power down (res ) minimum number of bytes specified has to be given, without which, the command will be ignored. in the case of page program, if the number of byte after the command is less than 4 (at least 1 data byte), it will be ignored too. in the case of se and be, exact 24-bit address is a must, any less or more will cause the command to be ignored. all attempts to access the memory array during a writ e status register cycle, program cycle or erase cycle are ignored, and the internal write status register cycle, program cycle or erase cycle continues unaffected.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 15 en25q128 rev. j, issue date: 2011 / 09 / 19 table 4a. instruction set instruction name byte 1 code byte 2 byte 3 byte 4 byte 5 byte 6 n-bytes eqpi 38h rstqio (2) ffh rsten 66h rst (1) 99h write enable 06h write disable / exit otp mode 04h read status register 05h (s7-s0) (3) continuous (4) write status register 01h s7-s0 page program 02h a23-a16 a15-a8 a7-a0 d7-d0 next byte continuous sector erase / otp erase 20h a23-a16 a15-a8 a7-a0 block erase d8h a23-a16 a15-a8 a7-a0 chip erase c7h/ 60h deep power-down b9h release from deep power-down, and read device id dummy dummy dummy (id7-id0) (5) release from deep power-down abh 00h (m7-m0) (id7-id0) manufacturer/ device id 90h dummy dummy 01h (id7-id0) (m7-m0) (6) read identification 9fh (m7-m0) (id15-id8) (id7-id0) (7) enter otp mode 3ah notes: 1. rst command only executed if rsten command is executed first. any intervening command will disable reset. 2. device accepts eight-clocks command in standard spi mode, or two-clocks command in quad spi mode 3. data bytes are shifted with most significant bit first. byte fields with data in parenthesis ?( )? indicate data being read from the device on the do pin 4. the status register contents will repeat continuously until cs# terminate the instruction 5. the device id will repeat continuously until cs# terminates the instruction 6. the manufacturer id and device id bytes will repeat continuously until cs# terminates the instruction. 00h on byte 4 starts with mid and alternate with did, 01h on byte 4 starts with did and alternate with mid 7. (m7-m0) : manufacturer, (id15-id8) : memory type, (id7-id0) : memory capacity
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 16 en25q128 rev. j, issue date: 2011 / 09 / 19 table 4b. instruction set (read instruction) instruction name byte 1 code byte 2 byte 3 byte 4 byte 5 byte 6 n-bytes read data 03h a23-a16 a15-a8 a7-a0 (d7-d0) (next byte) continuous fast read 0bh a23-a16 a15-a8 a7-a0 dummy (d7-d0) (next byte) continuous dual output fast read 3bh a23-a16 a15-a8 a7-a0 dummy (d7-d0, ?) (1) (one byte per 4 clocks, continuous) dual i/o fast read bbh a23-a8 (2) a7-a0, dummy (2) (d7-d0, ?) (1) (one byte per 4 clocks, continuous) quad i/o fast read ebh a23-a0, dummy (4) ( dummy , d7-d0 ) (5) (d7-d0, ?) (3) (one byte per 2 clocks, continuous) notes: 1. dual output data dq 0 = (d6, d4, d2, d0) dq 1 = (d7, d5, d3, d1) 2. dual input address dq 0 = a22, a20, a18, a16, a14, a12, a10, a8 ; a6, a4, a2, a0, dummy 6, dummy 4, dummy 2, dummy 0 dq 1 = a23, a21, a19, a17, a15, a13, a11, a9 ; a7, a5, a3, a1, dummy 7, dummy 5, dummy 3, dummy 1 3. quad data dq 0 = (d4, d0, ?? ) dq 1 = (d5, d1, ?? ) dq 2 = (d6, d2, ?... ) dq 3 = (d7, d3, ?... ) 4. quad input address dq 0 = a20, a16, a12, a8, a4, a0, dummy 4, dummy 0 dq 1 = a21, a17, a13, a9, a5, a1, dummy 5, dummy 1 dq 2 = a22, a18, a14, a10, a6, a2, dummy 6, dummy 2 dq 3 = a23, a19, a15, a11, a7, a3, dummy 7, dummy 3 5. quad i/o fast read data dq 0 = ( dummy 12, dummy 8, dummy 4, dummy 0, d4, d0 ) dq 1 = ( dummy 13, dummy 9, dummy 5, dummy 1, d5, d1 ) dq 2 = ( dummy 14, dummy 10, dummy 6, dummy 2, d6, d2 ) dq 3 = ( dummy 15, dummy 11, dummy 7, dummy 3, d7, d3 )
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 17 en25q128 rev. j, issue date: 2011 / 09 / 19 table 5. manufacturer and device identification op code (m7-m0) (id15-id0) (id7-id0) abh 17h 90h 1ch 17h 9fh 1ch 3018h enable quad peripheral interface mode (eqpi) (38h) the enable quad peripheral interface mode (eqpi) instruction will enable the flash device for quad spi bus operation. upon completion of the instruction, all instru ctions thereafter will be 4-bit multiplexed input/output until a power cycle or ? reset quad i/o instruction ? instruction, as shown in figure 5. the device did not support the read data bytes (read) (03h) , dual output fast read (3bh) and dual input/output fast_read (bbh) modes while the enable quad peripheral interface mode (eqpi) (38h) turns on. figure 5. enable quad peripheral interface mode sequence diagram reset quad i/o (rstqio) (ffh) the reset quad i/o instruction resets the device to 1-bit standard spi operation. to execute a reset quad i/o operation, the host drives cs# low, sends the reset quad i/o command cycle (ffh) then, drives cs# high. this command can?t be used in standard spi mode.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 18 en25q128 rev. j, issue date: 2011 / 09 / 19 reset-enable (rsten) (66h) and reset (rst) (99h) the reset operation is used as a system (software) reset that puts the device in normal operating ready mode. this operation consists of two commands: reset-enable (rsten) and reset (rst). to reset the en25q128 the host drives cs# low, sends the reset-enable command (66h), and drives cs# high. next, the host drives cs# low again, sends the reset command (99h), and drives cs# high. the reset operation requires the reset-enable command followed by the reset command. any command other than the reset command after the reset-enable command will disable the reset- enable. a successful command execution will reset the status register to data = 00h, see figure 6 for spi mode and figure 6.1 for eqpi mode. a device reset during an active program or erase operation aborts the operation, which can cause the data of the targeted address range to be corrupted or lost. depending on the prior operation, the reset timing may vary. recovery from a write operation requires more software latency time (t sr ) than recovery from other operations. figure 6. reset-enable and reset sequence diagram figure 6.1 reset-enable and reset sequence diagram under eqpi mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 19 en25q128 rev. j, issue date: 2011 / 09 / 19 software reset flow initial command = 66h ? reset enable command = 99h ? reset start wip = 0 ? reset done embedded reset cycle yes no no yes no yes note: 1. reset-enable (rsten) (66h) and reset (rst) (99h) commands need to match standard spi or eqpi (quad) mode. 2. continue (enhance) eb mode need to use quad reset-enable (rsten) (66h) and quad reset (rst) (99h) commands. 3. if user is not sure it is in spi or quad mode, we suggest to execute sequence as follows: quad reset-enable (rsten) (66h) -> quad reset (rst) (99h) -> spi reset-enable (rsten) (66h) -> spi reset (rst) (99h) to reset. 4. the reset command could be executed during embedded program and erase process, eqpi mode and continue eb mode to back to spi mode. 5. this flow cannot release the device from deep power down mode. 6. the status register bit will reset to default value after reset done. 7. if user reset device during erase, the embedded reset cycle software reset latency will take about 28us in worst case.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 20 en25q128 rev. j, issue date: 2011 / 09 / 19 write enable (wren) (06h) the write enable (wren) instruction (figure 7) sets the write enable latch (wel) bit. the write enable latch (wel) bit must be set prior to every page program (pp), sector erase (se), block erase (be), chip erase (ce) and write status register (wrsr) instruction. the write enable (wren) instruction is entered by driving chip select (cs#) low, sending the instruction code, and then driving chip select (cs#) high. the instruction sequence is shown in figure 8.1 while using the enable quad peripheral interface mode (eqpi) (38h) command. figure 7. write enable instruction sequence diagram write disable (wrdi) (04h) the write disable instruction (figure 8) resets the write enable latch (wel) bit in the status register to a 0 or exit from otp mode to normal mode. the write disable instruction is entered by driving chip select (cs#) low, shifting the instruction code ?04h? into the di pin and then driving chip select (cs#) high. note that the wel bit is automatically reset after power-up and upon completion of the write status register, page program, sector erase, block erase (be) and chip erase instructions. the instruction sequence is shown in figure 8.1 while using the enable quad peripheral interface mode (eqpi) (38h) command. figure 8. write disable instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 21 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 8.1 write enable/disable instruction sequence under eqpi mode read status register (rdsr) (05h) the read status register (rdsr) instruction allows the status register to be read. the status register may be read at any time, even while a program, erase or write status register cycle is in progress. when one of these cycles is in progress, it is recommended to check the write in progress (wip) bit before sending a new instruction to the device. it is also possible to read the status register continuously, as shown in figure 9. the instruction sequence is shown in figure 9.1 while using the enable quad peripheral interface mode (eqpi) (38h) command. figure 9. read status register instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 22 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 9.1 read status register instruction sequence under eqpi mode table 6. status register bit locations s7 s6 s5 s4 s3 s2 s1 s0 srp status register protect otp_lock bit (note 1) wpdis (wp# disable) bp3 (block protected bits) bp2 (block protected bits) bp1 (block protected bits) bp0 (block protected bits) wel (write enable latch) wip (write in progress bit) (note 3) 1 = status register write disable 1 = otp sector is protected 1 = wp# disable 0 = wp# enable (note 2) (note 2) (note 2) (note 2) 1 = write enable 0 = not write enable 1 = write operation 0 = not in write operation non-volatile bit non-volatile bit non-volatile bit. non-volatile bit non-volatile bit non-volatile bit volatile bit volatile bit note 1. in otp mode, srp bit is served as otp_lock bit. 2. see the table ? protected area sizes sector organization?. the status and control bits of the status register are as follows: wip bit. the write in progress (wip) bit indicates whether the memory is busy with a write status register, program or erase cycle. when set to 1, such a cycle is in progress, when reset to 0 no such cycle is in progress. wel bit. the write enable latch (wel) bit indicates the status of the internal write enable latch. when set to 1 the internal write enable latch is set, when set to 0 the internal write enable latch is reset and no write status register, program or erase instruction is accepted. bp3, bp2, bp1, bp0 bits. the block protect (bp3, bp2, bp1, bp0) bits are non-volatile. they define the size of the area to be software protected against program and erase instructions. these bits are written with the write status register (wrsr) instruction. when one or both of the block protect (bp3, bp2, bp1, bp0) bits is set to 1, the relevant memory area (as defined in table 3.) becomes protected against page program (pp) sector erase (se) and , block erase (be), instructions. the block protect
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 23 en25q128 rev. j, issue date: 2011 / 09 / 19 (bp3, bp2, bp1, bp0) bits can be written provided that the hardware protected mode has not been set. the chip erase (ce) instruction is executed if, and only if, all block protect (bp3, bp2, bp1, bp0) bits are 0. wpdis bit. the write protect disable (wpdis) bit, non-volatile bit, when it is reset to ?0? (factory default) to enable wp# function or is set to ?1? to disable wp# function (can be floating during spi mode.) srp bit / otp_lock bit. the status register protect (srp) bit operates in conjunction with the write protect (wp#) signal. the status register write protect (srp) bit and write protect (wp#) signal allow the device to be put in the hardware protected mode (when the status register protect (srp) bit is set to 1, and write protect (wp#) is driven low). in this mode, the non-volatile bits of the status register (srp, bp3, bp2, bp1, bp0) become read-only bits and the write status register (wrsr) instruction is no longer accepted for execution. in otp mode, this bit serves as otp_lock bit, user can read/program/erase otp sector as normal sector while otp_lock value is equal 0, after otp_lock is programmed with 1 by wrsr command, the otp sector is protected from program and erase operation. the otp_lock bit can only be programmed once. note : in otp mode, the wrsr command will ignore any input data and program otp_lock bit to 1, user must clear the protect bits before enter otp mode and program the otp code, then execute wrsr command to lock the otp sector before leaving otp mode. write status register (wrsr) (01h) the write status register (wrsr) instruction allows new values to be written to the status register. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded and executed, the device sets the write enable latch (wel). the write status register (wrsr) instruction is entered by driving chip select (cs#) low, followed by the instruction code and the data byte on serial data input (di). the instruction sequence is shown in figure 10. the write status register (wrsr) instruction has no effect on s1 and s0 of the status register. chip select (cs#) must be driven high after the eighth bit of the data byte has been latched in. if not, the write status register (wrsr) instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed write status register cycle (whose duration is t w ) is initiated. while the write status register cycle is in progress, the status register may still be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed write status register cycle, and is 0 when it is completed. when the cycle is completed, the write enable latch (wel) is reset. the write status register (wrsr) instruction allows the user to change the values of the block protect (bp3, bp2, bp1, bp0) bits, to define the size of the area that is to be treated as read-only, as defined in table 3. the write status register (wrsr) instruction also allows the user to set or reset the status register protect (srp) bit in accordance with the write protect (wp#) signal. the status register protect (srp) bit and write protect (wp#) signal allow the device to be put in the hardware protected mode (hpm). the write status register (wrsr) instruction is not executed once the hardware protected mode (hpm) is entered. the instruction sequence is shown in figure 10.1 while using the enable quad peripheral interface mode (eqpi) (38h) command. note : in the otp mode, wrsr command will igno re input data and program otp_lock bit to 1.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 24 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 10. write status register instruction sequence diagram figure 10.1 write status register instruction sequence under eqpi mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 25 en25q128 rev. j, issue date: 2011 / 09 / 19 read data bytes (read) (03h) the device is first selected by driving chip select (cs#) low. the instruction code for the read data bytes (read) instruction is followed by a 3-byte address (a23-a0), each bit being latched-in during the rising edge of serial clock (clk). then the memory contents, at that address, is shifted out on serial data output (do), each bit being shifted out, at a maximum frequency f r , during the falling edge of serial clock (clk). the instruction sequence is shown in figure 11. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. the whole memory can, therefore, be read with a single read data bytes (read) instruction. when the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. the read data bytes (read) instruction is terminated by driving chip select (cs#) high. chip select (cs#) can be driven high at any time during data output. any read data bytes (read) instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. figure 11. read data instruction sequence diagram read data bytes at higher speed (fast_read) (0bh) the device is first selected by driving chip select (cs#) low. the instruction code for the read data bytes at higher speed (fast_read) instruction is followed by a 3-byte address (a23-a0) and a dummy byte, each bit being latched-in during the rising edge of serial clock (clk). then the memory contents, at that address, is shifted out on serial data output (do), each bit being shifted out, at a maximum frequency f r , during the falling edge of serial clock (clk). the instruction sequence is shown in figure 12. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. the whole memory can, therefore, be read with a single read data bytes at higher speed (fast_read) instruction. when the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. the read data bytes at higher speed (fast_read) instruction is terminated by driving chip select (cs#) high. chip select (cs#) can be driven high at any time during data output. any read data bytes at higher speed (fast_read) instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. the instruction sequence is shown in figure 12.1 while using the enable quad peripheral interface mode (eqpi) (38h) command.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 26 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 12. fast read instruction sequence diagram figure 12.1 fast read instruction sequence under eqpi mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 27 en25q128 rev. j, issue date: 2011 / 09 / 19 dual output fast read (3bh) the dual output fast read (3bh) is similar to the standard fast read (0bh) instruction except that data is output on two pins, dq 0 and dq 1 , instead of just dq 0 . this allows data to be transferred from the en25q128 at twice the rate of standard spi devices. the dual output fast read instruction is ideal for quickly downloading code from to ram upon power-up or for applications that cache code- segments to ram for execution. similar to the fast read instruction, the dual output fast read instruction can operation at the highest possible frequency of fr (see ac electrical characteristics). this is accomplished by adding eight ?dummy clocks after the 24-bit address as shown in figure 13. the dummy clocks allow the device?s internal circuits additional time for setting up the initial address. the input data during the dummy clock is ?don?t care?. however, the di pin should be high-impedance prior to the falling edge of the first data out clock. figure 13. dual output fast read instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 28 en25q128 rev. j, issue date: 2011 / 09 / 19 dual input / output fast_read (bbh) the dual i/o fast read (bbh) instruction allows for improved random access while maintaining two io pins, dq 0 and dq 1 . it is similar to the dual output fast read (3bh) instruction but with the capability to input the address bits (a23-0) two bits per clock. this reduced instruction overhead may allow for code execution (xip) directly from the dual spi in some applications. the dual i/o fast read instruction enable double throughput of serial flash in read mode. the address is latched on rising edge of clk, and data of every two bits (interleave 2 i/o pins) shift out on the falling edge of clk at a maximum frequency. the first address can be at any location. the address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single dual i/o fast read instruction. the address counter rolls over to 0 when the highest address has been reached. once writing dual i/o fast read instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit, as shown in figure 14. figure 14. dual input / output fast read instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 29 en25q128 rev. j, issue date: 2011 / 09 / 19 quad input / output fast_read (ebh) the quad input/output fast_read (ebh) instruction is similar to the dual i/o fast read (bbh) instruction except that address and data bits are input and output through four pins, dq 0 , dq 1 , dq 2 and dq 3 and six dummy clocks are required prior to the data output. the quad i/o dramatically reduces instruction overhead allowing faster random access for code execution (xip) directly from the quad spi. the quad input/output fast_read (ebh) instruction enable quad throughput of serial flash in read mode. the address is latching on rising edge of clk, and data of every four bits (interleave on 4 i/o pins) shift out on the falling edge of clk at a maximum frequency f r . the first address can be any location. the address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single quad input/output fast_read instruction. the address counter rolls over to 0 when the highest address has been reached. once writing quad input/output fast_read instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit. the sequence of issuing quad input/output fast_read (ebh) instruction is: cs# goes low -> sending quad input/output fast_read (ebh) instruction -> 24-bit address interleave on dq 3 , dq 2 , dq 1 and dq 0 -> 6 dummy clocks -> data out interleave on dq 3 , dq 2 , dq 1 and dq 0 -> to end quad input/output fast_read (ebh) operation can use cs# to high at any time during data out, as shown in figure 15. the instruction sequence is shown in figure 15.1 while using the enable quad peripheral interface mode (eqpi) (38h) command. figure 15. quad input / output fast read instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 30 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 15.1. quad input / output fast read instruction sequence under eqpi mode another sequence of issuing quad input/output fast_read (ebh) instruction especially useful in random access is : cs# goes low -> sending quad input/output fast_read (ebh) instruction -> 24- bit address interleave on dq 3 , dq 2 , dq 1 and dq 0 -> performance enhance toggling bit p[7:0] -> 4 dummy clocks -> data out interleave on dq 3 , dq 2 , dq 1 and dq 0 till cs# goes high -> cs# goes low (reduce quad input/output fast_read (ebh) instruction) -> 24-bit random access address, as shown in figure 16. in the performance ? enhancing mode, p[7:4] must be toggling with p[3:0] ; likewise p[7:0] = a5h, 5ah, f0h or 0fh can make this mode continue and reduce the next quad input/output fast_read (ebh) instruction. once p[7:4] is no longer toggling with p[3:0] ; likewise p[7:0] = ffh, 00h, aah or 55h. and afterwards cs# is raised, the system then will escape from performance enhance mode and return to normal operation. while program/ erase/ write status register is in progress, quad input/output fast_read (ebh) instruction is rejected without impact on the program/ erase/ write status register current cycle. the instruction sequence is shown in figure 16.1 while using the enable quad peripheral interface mode (eqpi) (38h) command.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 31 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 16. quad input/output fast read enhance performance mode sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 32 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 16.1 quad input/output fast read enha nce performance mode sequence under eqpi mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 33 en25q128 rev. j, issue date: 2011 / 09 / 19 page program (pp) (02h) the page program (pp) instruction allows bytes to be programmed in the memory. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the page program (pp) instruction is entered by driving chip select (cs#) low, followed by the in- struction code, three address bytes and at least one data byte on serial data input (di). if the 8 least significant address bits (a7-a0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (a7-a0) are all zero). chip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 17. if more than 256 bytes are sent to the device, pre- viously latched data are discarded and the last 256 data bytes are guaranteed to be programmed cor- rectly within the same page. if less than 256 data bytes are sent to device, they are correctly pro- grammed at the requested addresses without having any effects on the other bytes of the same page. chip select (cs#) must be driven high after the eighth bit of the last data byte has been latched in, otherwise the page program (pp) instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed page program cycle (whose duration is t pp ) is initiated. while the page program cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed page program cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a page program (pp) instruction applied to a page which is protected by the block protect (bp3, bp2, bp1, bp0) bits (see table 3) is not executed. the instruction sequence is shown in figure 17.1 while using the enable quad peripheral interface mode (eqpi) (38h) command. figure 17. page program instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 34 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 17.1 program instruction sequence under eqpi mode sector erase (se) (20h) the sector erase (se) instruction sets to 1 (ffh) all bits inside the chosen sector. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the sector erase (se) instruction is entered by driving chip select (cs#) low, followed by the in- struction code, and three address bytes on serial data input (di). any address inside the sector (see table 2) is a valid address for the sector erase (se) instruction. chip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 18. chip select (cs#) must be driven high after the eighth bit of the last address byte has been latched in, otherwise the sector erase (se) instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed sector erase cycle (whose du- ration is t se ) is initiated. while the sector erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed sector erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a sector erase (se) instruction applied to a sector which is protected by the block protect (bp3, bp2, bp1, bp0) bits (see table 3) is not executed. the instruction sequence is shown in figure 19.1 while using the enable quad peripheral interface mode (eqpi) (38h) command.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 35 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 18. sector erase instruction sequence diagram block erase (be) (d8h) the block erase (be) instruction sets to 1 (ffh) all bits inside the chosen block. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the block erase (be) instruction is entered by driving chip select (cs#) low, followed by the in- struction code, and three address bytes on serial data input (di). any address inside the block (see table 2) is a valid address for the block erase (be) instruction. chip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 19. chip select (cs#) must be driven high after the eighth bit of the last address byte has been latched in, otherwise the block erase (be) instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed block erase cycle (whose du- ration is t be ) is initiated. while the block erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self- timed block erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a block erase (be) instruction applied to a block which is protected by the block protect (bp3, bp2, bp1, bp0) bits (see table 3) is not executed. the instruction sequence is shown in figure 19.1 while using the enable quad peripheral interface mode (eqpi) (38h) command.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 36 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 19. block erase instruction sequence diagram figure 19.1 block/sector erase instruction sequence under eqpi mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 37 en25q128 rev. j, issue date: 2011 / 09 / 19 chip erase (ce) (c7h/60h) the chip erase (ce) instruction sets all bits to 1 (ffh). before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the chip erase (ce) instruction is entered by driving chip select (cs#) low, followed by the instructio n code on serial data input (di). chip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 20. chip select (cs#) must be driven high after the eighth bit of the instruction code has been latched in, otherwise the chip erase instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed chip erase cycle (whose duration is t ce ) is initiated. while the chip erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed chip erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. the chip erase (ce) instruction is executed only if all block protect (bp3, bp2, bp1, bp0) bits are 0. the chip erase (ce) instruction is ignored if one, or more blocks are protected. the instruction sequence is shown in figure 20.1 while using the enable quad peripheral interface mode (eqpi) (38h) command. figure 20. chip erase instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 38 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 20.1 chip erase sequence under eqpi mode deep power-down (dp) (b9h) executing the deep power-down (dp) instruction is the only way to put the device in the lowest con- sumption mode (the deep power-down mode). it can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all write, program and erase instructions. driving chip select (cs#) high deselects the device, and puts the device in the standby mode (if there is no internal cycle currently in progress). but this mode is not the deep power-down mode. the deep power-down mode can only be entered by executing the deep power-down (dp) instruction, to reduce the standby current (from i cc1 to i cc2 , as specified in table 9.) once the device has entered the deep power-down mode, all instructions are ignored except the release from deep power-down and read device id (rdi) instruction. this releases the device from this mode. the release from deep power-down and read device id (rdi) instruction also allows the device id of the device to be output on serial data output (do). the deep power-down mode automatically stops at power-down, and the device always powers-up in the standby mode. the deep power-down (dp) instruction is entered by driving chip select (cs#) low, followed by the instruction code on serial data input (di). chip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 21. chip select (cs#) must be driven high after the eighth bit of the instruction code has been latched in, otherwise the deep power-down (dp) instruction is not executed. as soon as chip select (cs#) is driven high, it requires a delay of t dp before the supply current is reduced to i cc2 and the deep power-down mode is entered. any deep power-down (dp) instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 39 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 21. deep power-down instruction sequence diagram release from deep power-down and read device id (rdi) once the device has entered the deep power-down mode, all instructions are ignored except the release from deep power-down and read device id (rdi) instruction. executing this instruction takes the device out of the deep power-down mode. please note that this is not the same as, or even a subset of, the jedec 16-bit electronic signature that is read by the read identifier (rdid) instruction. the old-style electronic signature is supported for reasons of backward compatibility, only, and should not be used for new designs. new designs should, instead, make use of the jedec 16-bit electronic signature, and the read identifier (rdid) instruction. when used only to release the device from the power-down state, the instruction is issued by driving the cs# pin low, shifting the instruction code ?abh? and driving cs# high as shown in figure 22. after the time duration of t res1 (see ac characteristics) the device will resume normal operation and other instructions will be accepted. the cs# pin must remain high during the t res1 time duration. when used only to obtain the device id while not in the power-down state, the instruction is initiated by driving the cs# pin low and shifting the instruction code ?abh? followed by 3-dummy bytes. the device id bits are then shifted out on the falling edge of clk with most significant bit (msb) first as shown in figure 23. the device id value for the en25q128 are listed in table 5. the device id can be read continuously. the instruction is completed by driving cs# high. when chip select (cs#) is driven high, the device is put in the stand-by power mode. if the device was not previously in the deep power-down mode, the transition to the stand-by power mode is immediate. if the device was previously in the deep power-down mode, though, the transition to the standby power mode is delayed by t res2 , and chip select (cs#) must remain high for at least t res2 (max), as specified in table 11. once in the stand-by power mode, the device waits to be selected, so that it can receive, decode and execute instructions. except while an erase, program or write status register cycle is in progress, the release from deep power-down and read device id (rdi) instruction always provides access to the 8bit device id of the device, and can be applied even if the deep power-down mode has not been entered. any release from deep power-down and read device id (rdi) instruction while an erase, program or write status register cycle is in progress, is not decoded, and has no effect on the cycle that is in progress.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 40 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 22. release power-down instruction sequence diagram figure 23. release power-down / device id instruction sequence diagram read manufacturer / device id (90h) the read manufacturer/device id instruction is an alternative to the release from power-down / device id instruction that provides both the jedec assigned manufacturer id and the specific device id. the read manufacturer/device id instruction is very similar to the release from power-down / device id instruction. the instruction is initiated by driving the cs# pin low and shifting the instruction code ?90h? followed by a 24-bit address (a23-a0) of 000000h. after which, the manufacturer id for eon (1ch) and the device id are shifted out on the falling edge of clk with most significant bit (msb) first as shown in figure 24. the device id values for the en25q128 are listed in table 5. if the 24-bit address is initially set to 000001h the device id will be read first the instruction sequence is shown in figure 24.1 while using the enable quad peripheral interface mode (eqpi) (38h) command.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 41 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 24. read manufacturer / device id diagram figure 24.1. read manufacturer / device id diagram under eqpi mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 42 en25q128 rev. j, issue date: 2011 / 09 / 19 read identification (rdid) (9fh) the read identification (rdid) instruction allows the 8-bit manufacturer identification to be read, followed by two bytes of device identification. the device identification indicates the memory type in the first byte , and the memory capacity of the device in the second byte . any read identification (rdid) instruction while an erase or program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. the read identification (rdid) instruction should not be issued while the device is in deep power down mode. the device is first selected by driving chip select low. then, the 8-bit instruction code for the instruction is shifted in. this is followed by the 24-bit device identification, stored in the memory, being shifted out on serial data output, each bit being shifted out during the falling edge of serial clock . the instruction sequence is shown in figure 25. the read identification (rdid) instruction is terminated by driving chip select high at any time during data output. when chip select is driven high, the device is put in the standby power mode. once in the standby power mode, the device waits to be selected, so that it can receive, decode and execute instructions. the instruction sequence is shown in figure 25.1 while using the enable quad peripheral interface mode (eqpi) (38h) command. figure 25. read identification (rdid)
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 43 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 25.1. read identification (rdid) under eqpi mode enter otp mode (3ah) this flash has an extra 512 bytes otp sector, user must issue enter otp mode command to read, program or erase otp sector. after entering otp mode, the otp sector is mapping to sector 4095, srp bit becomes otp_lock bit and can be read with rdsr command. program / erase command will be disabled when otp_lock bit is ?1? wrsr command will ignore the input data and program otp_lock bit to 1. user must clear the protect bits before enter otp mode. otp sector can only be program and erase before otp_lock bit is set to ?1? and bp [3:0] = ?0000? . in otp mode, user can read other sectors, but program/erase other sectors only allowed when otp_lock bit equal to ?0?. user can use wrdi (04h) command to exit otp mode. while in otp mode, user can use sector erase (20h) command only to erase otp data. the instruction sequence is shown in figure 26.1 while using the enable quad peripheral interface mode (eqpi) (38h) command. table 7. otp sector address sector sector size address range 4095 512 byte fff000h ? fff1ffh note: the otp sector is mapping to sector 4095
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 44 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 26. enter otp mode sequence figure 26.1 enter otp mode sequence under eqpi mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 45 en25q128 rev. j, issue date: 2011 / 09 / 19 power-up timing figure 27. power-up timing table 8. power-up timing and write inhibit threshold symbol parameter min. max. unit t vsl (1) vcc(min) to cs# low 10 s t puw (1) time delay to write instruction 1 10 ms vwi (1) write inhibit voltage 1 2.5 v note: 1.the parameters are characterized only. 2. vcc (max.) is 3.6v and vcc (min.) is 2.7v initial delivery state the device is delivered with the memory array erased: all bits are set to 1 (each byte contains ffh). the status register contains 00h (all status register bits are 0).
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 46 en25q128 rev. j, issue date: 2011 / 09 / 19 table 9. dc characteristics (t a = - 40c to 85c or -40c ~125c; v cc = 2.7-3.6v) symbol parameter test conditions min. max. unit i li input leakage current - 2 a i lo output leakage current - 2 a i cc1 standby current cs# = v cc , v in = v ss or v cc - 20 a i cc2 deep power-down current cs# = v cc , v in = v ss or v cc - 20 a clk = 0.1 v cc / 0.9 v cc at 104mhz, dq = open - 25 ma i cc3 operating current (read) clk = 0.1 v cc / 0.9 v cc at 80mhz, dq = open - 20 ma i cc4 operating current (pp) cs# = v cc - 28 ma i cc5 operating current (wrsr) cs# = v cc - 18 ma i cc6 operating current (se) cs# = v cc - 25 ma i cc7 operating current (be) cs# = v cc - 25 ma v il input low voltage ? 0.5 0.2 v cc v v ih input high voltage 0.7v cc v cc +0.4 v v ol output low voltage i ol = 1.6 ma - 0.4 v v oh output high voltage i oh = ?100 a v cc -0.2 - v table 10. ac measurement conditions symbol parameter min. max. unit c l load capacitance 20/30 pf input rise and fall times 5 ns input pulse voltages 0.2 v cc to 0.8 v cc v input timing refe rence voltages 0.3 v cc to 0.7 v cc v output timing reference voltages v cc / 2 v notes: 1. c l = 20 pf when clk=104mhz, c l = 30 pf when clk = 80mhz, figure 28. ac measurement i/o waveform
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 47 en25q128 rev. j, issue date: 2011 / 09 / 19 table 11. ac characteristics (t a = - 40c to 85c or -40c ~125c; v cc = 2.7-3.6v) symbol alt parameter min typ max unit serial clock frequency for: fast_read, pp, se, be, dp, res, wren, wrdi, wrsr d.c. - 104 mhz f r f c serial clock frequency for: rdsr, rdid, dual output fast read d.c. - 80 mhz f r serial clock frequency for read, quad i/o fast read d.c. - 50 mhz t ch 1 serial clock high time 4 - - ns t cl 1 serial clock low time 4 - - ns t clch 2 serial clock rise time (slew rate) 0.1 - - v / ns t chcl 2 serial clock fall time (slew rate) 0.1 - - v / ns t slch t css cs# active setup time (relative to clk) 5 - - ns t chsh cs# active hold time (relative to clk) 5 - - ns t shch cs# not active setup time (relative to clk) 5 - - ns t chsl cs# not active hold time (relative to clk) 5 - - ns t shsl t csh cs# high time for read cs# high time for program/erase 15 50 - - ns ns t shqz 2 t dis output disable time - - 6 ns t clqx t ho output hold time 0 - - ns t dvch t dsu data in setup time 2 - - ns t chdx t dh data in hold time 5 - - ns t clqv t v output valid from clk - - 8 ns t whsl 3 write protect setup time before cs# low 20 - - ns t shwl 3 write protect hold time after cs# high 100 - - ns t dp 2 cs# high to deep power-down mode - - 3 s t res1 2 cs# high to standby mode without electronic signature read - - 3 s t res2 2 cs# high to standby mode with electronic signature read - - 1.8 s t w write status register cycle time - 15 50 ms t pp page programming time - 0.8 5 ms t se sector erase time - 0.05 0.3 s t be block erase time - 0.2 2 s t ce chip erase time - 45 140 s wip = write operation - - 28 s t sr software reset latency wip = not in write operation - - 0 s note: 1. t ch + t cl must be greater than or equal to 1/ f c 2. value guaranteed by characterization, not 100% tested in production. 3. only applicable as a constraint for a write status register instruction when status register protect bit is set at 1.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 48 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 29. serial output timing figure 30. input timing
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 49 en25q128 rev. j, issue date: 2011 / 09 / 19 absolute maximum ratings stresses above the values so mentioned above may cause permanent damage to the device. these values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability. parameter value unit storage temperature -65 to +150 c plastic packages -65 to +125 c output short circuit current 1 200 ma input and output voltage (with respect to ground) 2 -0.5 to +4.0 v vcc -0.5 to +4.0 v notes: 1. no more than one output shorted at a time. duration of the short circuit should not be greater than one second. 2. minimum dc voltage on input or i/o pins is ?0.5 v. during voltage transitions, inputs may undershoot v ss to ?1.0v for periods of up to 50ns and to ?2.0 v for periods of up to 20ns. see figure below. maximum dc voltage on output and i/o pins is v cc + 0.5 v. during voltage transitions, outputs may overshoot to v cc + 1.5 v for periods up to 20ns. see figure below. recommended operating ranges 1 parameter value unit ambient operating temperature industrial devices automotive devices -40 to 85 -40 to125 c operating supply voltage vcc full: 2.7 to 3.6 v notes: 1. recommended operating ranges define those limits between which the functionality of the device is guaranteed. vcc +1.5v maximum negative overshoot waveform maximum positive overshoot waveform
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 50 en25q128 rev. j, issue date: 2011 / 09 / 19 table 12. data retention and endurance parameter description test conditions min unit 150c 10 years data retention time 125c 20 years erase/program endurance -40 to 85 c 100k cycles table 13. capacitance ( v cc = 2.7-3.6v) parameter symbol parameter description test setup max unit c in input capacitance v in = 0 6 pf c out output capacitance v out = 0 8 pf note : sampled only, not 100% tested, at t a = 25c and a frequency of 20mhz.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 51 en25q128 rev. j, issue date: 2011 / 09 / 19 package mechanical figure 31. vdfn 8 ( 5x6 mm ) controlling dimensions ar e in millimeters (mm). dimension in mm symbol min. nor max a 0.70 0.75 0.80 a1 0.00 0.02 0.04 a2 - - - 0.20 - - - d 5.90 6.00 6.10 e 4.90 5.00 5.10 d2 3.30 3.40 3.50 e2 3.90 4.00 4.10 e - - - 1.27 - - - b 0.35 0.40 0.45 l 0.55 0.60 0.65 note : 1. coplanarity: 0.1 mm
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 52 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 32. vdfn 8 ( 6x8 mm ) min. nor max a 0.70 0.75 0.80 a1 0.00 0.02 0.05 a2 - - - 0.20 - - - d 7.908.008.10 e 5.906.006.10 d1 4.65 4.70 4.75 e1 4.55 4.60 4.65 e - - - 1.27 - - - b 0.350.400.48 l 0.4 0.50 0.60 note : 1. coplanarit y : 0.1 mm symbol dimension in mm notice: this package can?t contact to metal trace or pad on board due to expose metal pad underneath the package.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 53 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 33. 16 lead sop 300 mil min. nor max a - - - - - - 2.65 a1 0.10 0.20 0.30 a2 2.25 - - - 2.40 c 0.20 0.25 0.30 d 10.10 10.30 10.50 e 10.00 - - - 10.65 e1 7.40 7.50 7.60 e - - - 1.27 - - - b 0.31 - - - 0.51 l0.4- - -1.27 0 0 5 0 8 0 note : 1. co p lanarit y : 0.1 mm symbol dimension in mm
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 54 en25q128 rev. j, issue date: 2011 / 09 / 19 figure 34. 24-ball thin profile fine-pitch ball grid array (6 x 8 mm) package mi n. nor max a - - - - - - 1.20 a1 0. 2 7 - - - 0. 3 7 a2 a3 d e d1 - - - 3.00 - - - e1 - - - 5.00 - - - e - - - 1.00 - - - b - - - 0.40 - - - di me nsi on i n mm symbol 0.21 ref 0.54 ref 6 bsc 8 bsc
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 55 en25q128 rev. j, issue date: 2011 / 09 / 19 purpose eon silicon solution inc. (hereinafter called ?eon?) is going to provide its products? top marking on ics with < cfeon > from january 1 st , 2009, and without any change of the part number and the compositions of the ics. eon is still keeping the promise of quality for all the products with the same as that of eon delivered before. please be advised with the change and appreciate your kindly cooperation and fully support eon?s product family. eon products? top marking cfeon top marking example: for more information please contact your local sales office for additional information about eon memory solutions. cfeon part number: xxxx-xxx lot number: xxxxx date code: xxxxx
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 56 en25q128 rev. j, issue date: 2011 / 09 / 19 ordering information en25q128 - 104 f i p packaging content p = rohs compliant temperature range i = industrial (-40 c to +85 c) a = automotive (-40c to + 125c) package w = 8-pin vdfn (5x6mm) y = 8-pin vdfn (6x8mm) f = 16-pin 300mil sop bb = 24-ball ball grid arra y (6 x 8 mm) speed 104 = 104 mhz base part number en = eon silicon solution inc. 25q = 3v serial flash with 4kb uniform-sector, dual and quad i/o 128 = 128 megabit (16,384k x 8)
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eonssi .com or modifications due to changes in technical specifications. 57 en25q128 rev. j, issue date: 2011 / 09 / 19 revisions list revision no description date a initial release 2009/07/13 b 1. update page programming, sector, block and chip erase time (typ.) and (max.) parameter on page 1 and 50. (1). page programming: from 1.3ms to 0.8ms (typ.) , from 5ms to 3ms (max.) (2). sector erase: from 0.06s to 0.05s (typ.) , from 0.3s to 0.25s (max.) (3). block erase: from 0.25s to 0.2s (typ.) , from 2s to 1.6s (max.) (4). chip erase: from 50s to 45s (typ.) , from 100s to 90s (max.) 2. add figure 23. write suspend/resume flow on page 39 2009/09/03 c 1. add vdfn 8 ( 6 x 8 mm ) dimension on page 55. 2. modify table 10. dc characteristics i cc1 ( standby) and i cc2 ( deep power-down) current from 5a to 20a on page 49. 2009/10/21 d 1. add 24-ball ball grid array (6 x 8 mm) package option. 2. remove write suspend and write resume information. 3. modify software reset latency from 20 s to 28 s on page 47. 2010/02/04 e 1. update ac characteristics in table 11 on page 47. (1). page programming time from 3ms to 5ms (max.) (2). sector erase time from 0.25s to 0.3s (max.) (3). block erase time from 1.6s to 2s (max.) 2010/04/19 f 1. rename 38h command from enable quad i/o (eqio) to enable quad peripheral interface mode (eqpi). 2. revise the speed of quad spi from 80mhz to 50mhz. 2011/01/10 g 1. update write status register cycle time from 10 (typ.) /1 5 (max.) ms to 15 (typ.) / 50 (max.) ms on page 47. 2. remove the package option of 8 contact vdfn (5x6mm). 3. rename 24 ball package from bga to tfbga. 2011/04/19 h 1. add the note ?5. this flow cannot release the device from deep power down mode.? on page 19. 2. correct the typo of 6 dummy clocks for ebh command on page 29. 3. update chip erase time (max.) from 90s to 140s on page 47. 2011/07/01 i add automotive (-40 c to +125 c) grade temperature option. 2011/09/06 j add vdfn 8 ( 5 x 6 mm ) package option. 2011/09/19

▲Up To Search▲

Price & Availability of EN25Q128-104BBAP

	To Download EN25Q128-104BBAP Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .